In situ reflection electron microscopy for the analysis of silicon surface processes: Sublimation, electromigration, and adsorption of impurity atoms
DI Rogilo, SV Sitnikov, EE Rodyakina, AS Petrov… - Crystallography …, 2021 - Springer
The results of recent studies of the structural morphological transformations of Si (111) and
Si (100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) …
Si (100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) …
Real topography, atomic relaxations, and short-range chemical interactions in atomic force microscopy: The case of the surface
We have investigated the phases of the Sn∕ Si (111)-(3× 3) R 30° surface below 1 3 ML
coverage at room temperature by means of atomic force microscopy (AFM) and density …
coverage at room temperature by means of atomic force microscopy (AFM) and density …
Role of defects in two-dimensional phase transitions: An STM study of the Sn/Ge (111) system
The influence of Ge substitutional defects and vacancies on the (3× 3)→(3× 3) charge-
density wave phase transition in the α phase of Sn on Ge (111) has been studied using a …
density wave phase transition in the α phase of Sn on Ge (111) has been studied using a …
Atom tracking for reproducible force spectroscopy at room temperature with non-contact atomic force microscopy
A method for reproducible site-specific force spectroscopic measurements at room
temperature by combining frequency modulation atomic force microscopy and the atom …
temperature by combining frequency modulation atomic force microscopy and the atom …
Electronic structure of Indications of a low-temperature phase
The S n/S i (111) 3× 3 surface has been studied by photoelectron spectroscopy, low-energy
electron diffraction (LEED), and scanning tunneling microscopy. Unlike Sn/Ge (111), the …
electron diffraction (LEED), and scanning tunneling microscopy. Unlike Sn/Ge (111), the …
Effect of adsorbed Sn on Ge diffusivity on Si (111) surface
AE Dolbak, BZ Olshanetsky - Central European Journal of Physics, 2008 - Springer
The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si (111) surface has been
studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The …
studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The …
Structural transitions on Si (1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM
AS Petrov, DI Rogilo, RA Zhachuk, AI Vergules… - Applied Surface …, 2023 - Elsevier
Using in situ ultrahigh vacuum reflection electron microscopy, we have studied structural
transitions on the Si (1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML …
transitions on the Si (1 1 1) surface induced by Sn deposition up to 2 ML coverage (1 ML …
Epitaxy of Sn on Si (111)
DT Wang, N Esser, M Cardona, J Zegenhagen - Surface science, 1995 - Elsevier
We have used the Si (111): Sn-√ 3×√ 3) R30° and (2√ 3× 2√ 3) R30° reconstructions as
templates for room temperature deposition of Sn. Low energy electron diffraction (LEED) …
templates for room temperature deposition of Sn. Low energy electron diffraction (LEED) …
Initial stages of Sn adsorption on Si (1 1 1)-(7× 7)
By means of scanning tunneling microscopy (STM) we have performed a detailed analysis
of the initial stages of Sn adsorption on Si (111)-(7× 7) at room temperature (RT). At very low …
of the initial stages of Sn adsorption on Si (111)-(7× 7) at room temperature (RT). At very low …
Atomic structure of a single step and dynamics of Sn adatoms on the SiSn surface
RA Zhachuk, DI Rogilo, AS Petrov, DV Sheglov… - Physical Review B, 2021 - APS
The atomic structure of well-ordered single steps on the Si (111)− 3× 3− Sn surface and the
dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed …
dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed …