A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

A first die includes a three-dimensional memory device and first copper pads. A second die
includes a peripheral logic circuitry containing CMOS devices located on the semiconductor …

2019-01-15 Assigned to SANDISK TECHNOLOGIES LLC reassignment SANDISK
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

A memory film layer is formed in a memory opening through an alternating stack of first
material layers and second material layers. A sacrificial material layer is deposited on the …

US9230987B2 - Multilevel memory stack structure and methods of manufacturing the same
- Google Patents US9230987B2 - Multilevel memory stack structure and methods of …

(57) ABSTRACT A method of fabricating a semiconductor device, such as a three-
dimensional NAND memory string, includes forming a first stack of alternating layers of a first …

2016-03-24 Assigned to SANDISK TECHNOLOGIES INC. reassignment SANDISK
TECHNOLOGIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

(57) ABSTRACT A semiconductor device is provided. Word lines are formed on a substrate.
An air gap is interposed between two adjacent word lines. A channel structure penetrates …

(57) ABSTRACT A monolithic three dimensional NAND string includes a semiconductor
channel located over a substrate, a plurality of control gates extending Substantially parallel …

(57) ABSTRACT A first stack of alternating layers including first electrically insulating layers
and first sacrificial material layers is formed with first stepped Surfaces. First memory …