Analysis of AlGaN/GaN HEMT and its operational improvement using a grated gate field plate
This paper investigates the DC and RF performance of a gate field plate (GFP) and
proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor …
proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor …
Access region stack engineering for mitigation of degradation in algan/gan hemts with field plate
Electric field in a device varies as it switches between ON and OFF states. These states have
different intensities of electric field and carrier density. The regions having high electric field …
different intensities of electric field and carrier density. The regions having high electric field …
Introspection into reliability aspects in AlGaN/GaN HEMTs with gate geometry modification
Reliability enhancement of AlGaN/GaN HEMT is a significant thrust area due to rapidly
improving material and processing technology. In this paper, a detailed analysis of gate …
improving material and processing technology. In this paper, a detailed analysis of gate …
Design and analysis of a field plate engineered high electron mobility transistor for enhanced performance
In this paper, the impact of drain drift region and vertical scaling on breakdown performance
is investigated through exhaustive technology computer-aided design simulations. The …
is investigated through exhaustive technology computer-aided design simulations. The …
Improving thermal effects and reduction of self-heating phenomenon in AlGaN/GaN/Si based HEMT
In this paper, we reduce the self-heating effects of high-electron-mobility transistors (HEMT)
by using changes in material and structure. In the first step, the 6H-SiC layer is used both as …
by using changes in material and structure. In the first step, the 6H-SiC layer is used both as …
Transistor GaN sur Si 200mm compatible CMOS pour l'amplification de puissance en bande Ka: optimisation de l'empilement de grille
A Chanuel - 2022 - theses.hal.science
La brique de grille des transistors GaN nécessite un dimensionnement plus compact avec
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Do** Concentration
In this paper, the AIGaN/GaN HEMT without and with GaN cap layer (G_cap) along with
variation in its thickness (d_GaN) and do** concentration was presented. It is observed …
variation in its thickness (d_GaN) and do** concentration was presented. It is observed …
Numerical analysis of the Impact of Gate Geometry variations on the Reliability of AlGaN/GaN HEMT
Converse piezoelectric strain leads to degradations such as structural deformation, creation
of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an …
of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an …
Effect of Buried depth, Thickness of Channel and Gate length on Breakdown Voltage in AlGaN/GaN HEMT
In this work, effect of conventional AlGaN/GaN HEMT with non recessed channel (NR-
HEMT) on breakdown voltage is presented for different depth of buried region and thickness …
HEMT) on breakdown voltage is presented for different depth of buried region and thickness …
Design and Analysis of Dual AIN/SiN Passivation Layer for Mitigation
Nowadays, high power and high frequency devices have various reliability issues due to
which their performance is limited. The main cause is self-heating in gate drain region and E …
which their performance is limited. The main cause is self-heating in gate drain region and E …