Structural properties of self-organized semiconductor nanostructures
J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
[BOOK][B] High-resolution X-ray scattering: from thin films to lateral nanostructures
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has
grown as a result of the development of the semiconductor industry and the increasing …
grown as a result of the development of the semiconductor industry and the increasing …
Self-organized growth on GaAs surfaces
BA Joyce, DD Vvedensky - Materials Science and Engineering: R: Reports, 2004 - Elsevier
GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …
both to its importance as a substrate for epitaxial growth and to the challenge its phase …
Shape transition during epitaxial growth of quantum dots on : Theory and experiment
P Kratzer, QKK Liu, P Acosta-Diaz, C Manzano… - Physical Review B …, 2006 - APS
For heteroepitaxial growth of InAs islands on GaAs (001), a transition of shapes is observed
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …
experimentally by scanning-tunneling microscopy and analyzed theoretically in terms of the …
[BOOK][B] Plasma-aided nanofabrication: from plasma sources to nanoassembly
K Ostrikov, S Xu - 2007 - books.google.com
In this single work to cover the use of plasma as nanofabrication tool in sufficient depth
internationally renowned authors with much experience in this important method of …
internationally renowned authors with much experience in this important method of …
Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots
PB Joyce, TJ Krzyzewski, PH Steans, GR Bell… - Surface science, 2001 - Elsevier
The change in shape and surface morphology of InAs/GaAs (001) quantum dots (QDs)
during their initial encapsulation by GaAs has been studied using reflection high energy …
during their initial encapsulation by GaAs has been studied using reflection high energy …
Three-dimensional strain field calculations in coupled InAs/GaAs quantum dots
B Jogai - Journal of Applied Physics, 2000 - pubs.aip.org
A detailed calculation of the three-dimensional strain field in and around InAs/GaAs
quantum dots is presented. The strain field is calculated by minimizing the elastic strain …
quantum dots is presented. The strain field is calculated by minimizing the elastic strain …
Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy
In LPE-grown semiconductor samples the formation of self-assembled nanoscale island
chains along the elastically soft< 100> directions can be observed. We explain this process …
chains along the elastically soft< 100> directions can be observed. We explain this process …
Faceting during GaAs quantum dot self-assembly by droplet epitaxy
Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga
droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy …
droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy …
The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures
Self-assembled strain-free GaAs quantum dot and quantum ring structures grown by droplet
epitaxy were investigated by the RHEED technique. The temporal evolution of these …
epitaxy were investigated by the RHEED technique. The temporal evolution of these …