Polymorphism in post-dichalcogenide two-dimensional materials
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and
associated versatility of properties. Furthermore, for a given composition, a variety of …
associated versatility of properties. Furthermore, for a given composition, a variety of …
Ultralow–switching current density multilevel phase-change memory on a flexible substrate
Phase-change memory (PCM) is a promising candidate for data storage in flexible
electronics, but its high switching current and power are often drawbacks. In this study, we …
electronics, but its high switching current and power are often drawbacks. In this study, we …
Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices
GeTe–Sb2Te3 superlattices are nanostructured phase-change materials which are under
intense investigation for non-volatile memory applications. They show superior properties …
intense investigation for non-volatile memory applications. They show superior properties …
Overview of the role of alloying modifiers on the performance of phase change memory materials
L Kang, L Chen - Journal of Electronic Materials, 2021 - Springer
Phase change memory (PCM) based on chalcogenide compounds is considered to be an
excellent candidate for next-generation memory because of its high speed, low energy …
excellent candidate for next-generation memory because of its high speed, low energy …
[PDF][PDF] Phase-change memory materials by design: a strain engineering approach
DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …
“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization
Ge-Sb-Te (GST)-based phase-change memory (PCM) excels in the switching performance
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
but remains insufficient of the operating speed to replace cache memory (the fastest memory …
A scheme for simulating multi-level phase change photonics materials
Chalcogenide phase change materials (PCMs) have been extensively applied in data
storage, and they are now being proposed for high resolution displays, holographic …
storage, and they are now being proposed for high resolution displays, holographic …
High Thermoelectric Performance of Non‐Stoichiometric and Oriented GeTe Thin Films
X Zhang, X Lu, P Jiang, X Bao - Small, 2023 - Wiley Online Library
The increasing demand for micro‐thermoelectric coolers and generators promotes the
research on thermoelectric (TE) thin films. As a promising medium‐temperature TE material …
research on thermoelectric (TE) thin films. As a promising medium‐temperature TE material …
Strain-engineered diffusive atomic switching in two-dimensional crystals
Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical
reactivity and diffusivity of materials. Here we show how strain can be used to control atomic …
reactivity and diffusivity of materials. Here we show how strain can be used to control atomic …
Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices
Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is
currently a key element of various electronics and portable systems. An important step in the …
currently a key element of various electronics and portable systems. An important step in the …