Progress in magnetic alloys with kagome structure: materials, fabrications and physical properties
D Zhang, Z Hou, W Mi - Journal of Materials Chemistry C, 2022 - pubs.rsc.org
Many intriguing physical properties, such as frustrated magnetic structure and non-zero
Berry curvature, appear in the magnetic alloys kagome structures due to their special lattice …
Berry curvature, appear in the magnetic alloys kagome structures due to their special lattice …
Recent progress in perpendicularly magnetized Mn-based binary alloy films
In this article, we review the recent progress in growth, structural characterizations, magnetic
properties, and related spintronic devices of tetragonal Mn x Ga and Mn x Al thin films with …
properties, and related spintronic devices of tetragonal Mn x Ga and Mn x Al thin films with …
Magnetoresistance effect in L1-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer
The fully perpendicular magnetic tunnel junctions (p-MTJs) based on L1 0-MnGa and thin
CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was …
CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was …
Tetragonal D022 Mn3+ xGe epitaxial films grown on MgO (100) with a large perpendicular magnetic anisotropy
S Mizukami, A Sakuma, A Sugihara… - Applied Physics …, 2013 - iopscience.iop.org
First-principles calculation of D0 22 Mn 3 Ge shows a fully spin-polarized Δ 1 band at the
Fermi level, low saturation magnetization MS= 180 emu/cm 3, high uniaxial magnetic …
Fermi level, low saturation magnetization MS= 180 emu/cm 3, high uniaxial magnetic …
High perpendicular magnetic anisotropy in D22-Mn3+ xGe tetragonal Heusler alloy films
A Sugihara, S Mizukami, Y Yamada, K Koike… - Applied Physics …, 2014 - pubs.aip.org
We prepared D0 22-Mn 3+ x Ge (− 0.67≤ x≤ 0.35) epitaxial thin films on MgO (001)
substrates with Cr (001) buffer layers and systematically investigated the dependence of …
substrates with Cr (001) buffer layers and systematically investigated the dependence of …
Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets
In this article, we review the recent progress in synthesis, characterization and related
spintronic devices of tetragonal Mn x Ga alloys with L 1 0 or D 0 22 ordering. After a brief …
spintronic devices of tetragonal Mn x Ga alloys with L 1 0 or D 0 22 ordering. After a brief …
Influence of Interface Structure on Magnetic Proximity Effect in Pt/Y3Fe5O12 Heterostructures
X Liang, Y Zhu, B Peng, L Deng, J **e… - … applied materials & …, 2016 - ACS Publications
The influence of interface structure on the magnetic proximity effect (MPE) in Pt/Y3Fe5O12
(YIG) bilayered heterostructures is studied by first-principles calculations based on the …
(YIG) bilayered heterostructures is studied by first-principles calculations based on the …
Electric field modulation of magnetism in ferrimagnetic Heusler heterostructures
To date the realization of magnetoresistive random access memory (RAM) and
magnetoelectric RAM (MeRAM) devices relies primarily on ultrathin ferromagnetic-based …
magnetoelectric RAM (MeRAM) devices relies primarily on ultrathin ferromagnetic-based …
Magneto-electronic properties and tetragonal deformation of rare-earth-element-based quaternary Heusler half-metals: A first-principles prediction
This manuscript reports the theoretical results on the magneto-electronic properties of 8 new
rare-earth-element-based equiatomic quaternary Heusler (EQH) half-metallic materials …
rare-earth-element-based equiatomic quaternary Heusler (EQH) half-metallic materials …
Ultrahigh tunneling-magnetoresistance ratios in nitride-based perpendicular magnetic tunnel junctions from first principles
We report a first-principles study of electronic structures, magnetic properties, and the
tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M 4 N (M= Fe …
tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M 4 N (M= Fe …