Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
Probing Defects in Nitrogen-Doped Cu2O
Nitrogen do** is a promising method of engineering the electronic structure of a metal
oxide to modify its optical and electrical properties; however, the do** effect strongly …
oxide to modify its optical and electrical properties; however, the do** effect strongly …
Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …
[HTML][HTML] Epitaxial superconductor-semiconductor two-dimensional systems for superconducting quantum circuits
Qubits on solid state devices could potentially provide the rapid control necessary for
develo** scalable quantum information processors. Materials innovation and design …
develo** scalable quantum information processors. Materials innovation and design …
Tuning supercurrent in Josephson field-effect transistors using h-BN dielectric
Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring
mesoscopic and topological superconductivity. A unique property of Josephson junction …
mesoscopic and topological superconductivity. A unique property of Josephson junction …
Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
The origin of the anomalous frequency dispersion in accumulation capacitance of metal-
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
insulator-semiconductor devices on InGaAs and InP substrates is investigated using …
GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III–V MOS devices
The use of an interfacial passivation layer is one important strategy for achieving a high
quality interface between high-k and III–V materials integrated into high-mobility metal …
quality interface between high-k and III–V materials integrated into high-mobility metal …
[HTML][HTML] Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
UV-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements were
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …
Prospects of terahertz transistors with the topological semimetal cadmium arsenide
Electronic devices that operate at terahertz frequencies will require new materials that
exhibit higher carrier velocities than traditional semiconductors. Calculations show that …
exhibit higher carrier velocities than traditional semiconductors. Calculations show that …
Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics
K Ahadi, K Cadien - RSC advances, 2016 - pubs.rsc.org
Anomalous growth per cycle was observed using in situ ellipsometry during the initial cycles
of plasma enhanced atomic layer deposition (ALD) of high-κ dielectrics, while thermal …
of plasma enhanced atomic layer deposition (ALD) of high-κ dielectrics, while thermal …