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Fabrication and applications of heterostructure materials for broadband ultrafast photonics
W Lyu, J An, Y Lin, P Qiu, G Wang… - Advanced Optical …, 2023 - Wiley Online Library
Heterostructure materials have attracted increasing attention in optics, medicine,
optoelectronics, and electromagnetics, owing to the combination of remarkable properties of …
optoelectronics, and electromagnetics, owing to the combination of remarkable properties of …
[HTML][HTML] Edge emitting mode-locked quantum dot lasers
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
Mode-locking and noise characteristics of InAs/InP quantum dash/dot lasers
The mode-locking and noise characteristics of InP/InAs quantum dash (QDash) and
quantum dot (QDot) multi-wavelength lasers, showing identical structural design, operating …
quantum dot (QDot) multi-wavelength lasers, showing identical structural design, operating …
High performance BH InAs/InP QD and InGaAsP/InP QW mode-locked lasers as comb and pulse sources
Coherent comb lasers may serve as a source for multiwavelength modulators in short reach
transmission, or for phase controlled OFDM channels in long reach. We explore and …
transmission, or for phase controlled OFDM channels in long reach. We explore and …
Time-domain traveling-wave analysis of the multimode dynamics of quantum dot Fabry–Perot lasers
In this paper, we investigate with numerical simulations the rich multimode dynamics of
quantum dot Fabry-Perot lasers. We have used a time-domain traveling-wave approach …
quantum dot Fabry-Perot lasers. We have used a time-domain traveling-wave approach …
Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers
High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-
band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are …
band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are …
Semiconductor nanostructures for flying q-bits and green photonics
D Bimberg - Nanophotonics, 2018 - degruyter.com
Breakthroughs in nanomaterials and nanoscience enable the development of novel
photonic devices and systems ranging from the automotive sector, quantum cryptography to …
photonic devices and systems ranging from the automotive sector, quantum cryptography to …
Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers
F Gao, S Luo, HM Ji, ST Liu, F Xu, ZR Lv… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
We demonstrate an ultrashort pulse and high power single-section mode-locked laser using
chirped multiple InAs/InP quantum dot (QD) layers as the active region of the laser. The …
chirped multiple InAs/InP quantum dot (QD) layers as the active region of the laser. The …
High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser
A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL)
emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up …
emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up …
Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laser
A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 μm is
presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive …
presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive …