Recent progress of amorphous nanomaterials

J Kang, X Yang, Q Hu, Z Cai, LM Liu, L Guo - Chemical Reviews, 2023 - ACS Publications
Amorphous materials are metastable solids with only short-range order at the atomic scale,
which results from local intermolecular chemical bonding. The lack of long-range order …

Electrolyte-gated transistors for enhanced performance bioelectronics

F Torricelli, DZ Adrahtas, Z Bao, M Berggren… - Nature Reviews …, 2021 - nature.com
Abstract Electrolyte-gated transistors (EGTs), capable of transducing biological and
biochemical inputs into amplified electronic signals and stably operating in aqueous …

Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices

J Shi, J Zhang, L Yang, M Qu, DC Qi… - Advanced …, 2021 - Wiley Online Library
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Research advances of amorphous metal oxides in electrochemical energy storage and conversion

S Yan, KP Abhilash, L Tang, M Yang, Y Ma, Q **a… - Small, 2019 - Wiley Online Library
Amorphous metal oxides (AMOs) have aroused great enthusiasm across multiple energy
areas over recent years due to their unique properties, such as the intrinsic isotropy …

Electronic defects in amorphous oxide semiconductors: A review

K Ide, K Nomura, H Hosono… - physica status solidi (a), 2019 - Wiley Online Library
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

[PDF][PDF] Recent progress in transistor‐based optoelectronic synapses: from neuromorphic computing to artificial sensory system

SW Cho, SM Kwon, YH Kim… - Advanced Intelligent …, 2021 - Wiley Online Library
Neuromorphic electronics draw attention as innovative approaches that facilitate hardware
implementation of next‐generation artificial intelligent system including neuromorphic in …

Mesoporous poorly crystalline α-Fe2O3 with abundant oxygen vacancies and acid sites for ozone decomposition

X Liang, L Wang, T Wen, H Liu, J Zhang, Z Liu… - Science of The Total …, 2022 - Elsevier
In this work, mesoporous poorly crystalline hematite (α-Fe 2 O 3) was prepared using
mesoporous silica (KIT-6) functionalized with 3-[(2-aminoethyl) amino] …

Amorphous oxide semiconductors: From fundamental properties to practical applications

B Lu, F Zhuge, Y Zhao, YJ Zeng, L Zhang… - Current Opinion in Solid …, 2023 - Elsevier
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …