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8-12 GHz pHEMT MMIC low-noise amplifier for 5G and fiber-integrated satellite applications
The fifth-generation (5G) radio access technology promises to revolutionise integrated earth-
space communications applications for ubiquitous, seamless and broadband services. The …
space communications applications for ubiquitous, seamless and broadband services. The …
Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers
T Kim, G Ryu, J Lee, MK Cho, DM Fleetwood… - Electronics, 2024 - mdpi.com
In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers
(LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT) …
(LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT) …
[HTML][HTML] Mitigation of single-event transients in high-frequency analog circuits using choke inductors
J Lee, T Kim, A Ildefonso, A Khachatrian… - Nuclear Engineering …, 2024 - Elsevier
Exposure to high-energy particles leads to a potential risk of generating single-event
transients (SETs) in active devices of microelectronic circuits, compromising signal integrity …
transients (SETs) in active devices of microelectronic circuits, compromising signal integrity …
[HTML][HTML] Investigation of Device-and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors
(HBTs) under dc stress and its potential impact on the performance of basic analog …
(HBTs) under dc stress and its potential impact on the performance of basic analog …
Cryo-CMOS band-gap reference circuits for quantum computing
The control interface of a large-scale quantum computer will likely require electronic sub-
systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here …
systems that operate in close proximity to the qubits, at deep cryogenic temperatures. Here …
Cryogenic Total Ionizing Dose Effects and Annealing Behaviors of SiGe HBTs
J Wei, P Zhang, X Yi, M Hong, X Fu… - … on Device and …, 2025 - ieeexplore.ieee.org
The total ionizing dose (TID) responses of 0.35 lm and 0.13 lm SiGe HBTs at liquid-nitrogen
temperature (78 K) were investigated using 10 keV X-rays. For the first time, we compared …
temperature (78 K) were investigated using 10 keV X-rays. For the first time, we compared …
[PDF][PDF] Single Event Effect Analysis of SiGe Low Noise Amplifier
M Bouhouche, S Latreche - FACULTY OF ELECTRICAL …, 2021 - els-journal.net
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA)
designed using SiGe het erojunction bipolar transistors (HBT). To verify the radiation …
designed using SiGe het erojunction bipolar transistors (HBT). To verify the radiation …