Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors
The surface roughness of barium titanate (BTO) following its implication by aerosol
deposition method (ADM), is a very important characteristic affecting its potential for use in …
deposition method (ADM), is a very important characteristic affecting its potential for use in …
Trap** threading dislocations in germanium trenches on silicon wafer
We show that Ge epilayers on Si substrates with trenches filled by Ge at a different
temperature have very low threading dislocation density compared to blanket Ge epilayers …
temperature have very low threading dislocation density compared to blanket Ge epilayers …
Effects of pad temperature on the chemical mechanical polishing of tungsten
In this study, the effects of pad temperature on the chemical mechanical polishing (CMP) of
tungsten were investigated. During polishing, the pad temperature was monitored and the …
tungsten were investigated. During polishing, the pad temperature was monitored and the …
Materials science and design for germanium monolithic light source on silicon
Y Cai - 2014 - dspace.mit.edu
Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility
and monolithic integration. It has great potential to be used as the light emitter for Si …
and monolithic integration. It has great potential to be used as the light emitter for Si …
CMP processing of high mobility channel materials: Alternatives to Si
P Ong, L Teugels - Advances in Chemical Mechanical Planarization (CMP …, 2016 - Elsevier
This chapter overviews chemical mechanical polishing (CMP) processes for the
implementation of high mobility materials in advanced complementary metal-oxide …
implementation of high mobility materials in advanced complementary metal-oxide …
Controlling germanium CMP selectivity through slurry mediation by surface active agents
New developments and device performance requirements in microelectronics industry add
to the challenges in chemical mechanical planarization (CMP) process. One of the recently …
to the challenges in chemical mechanical planarization (CMP) process. One of the recently …
Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
BR Albert - 2016 - dspace.mit.edu
Optoelectronic devices based on III-V direct gap semiconductors enable efficient energy
conversion for photovoltaic cells, light emission for LEDs, and on-chip communication via …
conversion for photovoltaic cells, light emission for LEDs, and on-chip communication via …
Experimental study on machining germanium wafer with ice particle, fixed abrasive tools
Z Yu, Y Sun, G Zhang, W Lu, D Zuo - The International Journal of …, 2021 - Springer
A novel ice particle-fixed abrasive tool (IPFAT) was designed and manufactured in this
paper. The uniformity of abrasives distribution in the IPFAT was tested. Using three kinds of …
paper. The uniformity of abrasives distribution in the IPFAT was tested. Using three kinds of …
Understanding defects in germanium and silicon for optoelectronic energy conversion
NS Patel - 2016 - dspace.mit.edu
This thesis explores bulk and interface defects in germanium (Ge) and silicon (Si) with a
focus on understanding the impact defect related bandgap states will have on optoelectronic …
focus on understanding the impact defect related bandgap states will have on optoelectronic …
Effect of reactive ion etch on the polishing selectivity during silicon nitride chemical mechanical polishing for sub-10 nm logic device
J Han, X Shi, C Wu, D Koli, HJ Kim - ECS Journal of Solid State …, 2017 - iopscience.iop.org
Abstract Silicon nitride (SiN) Chemical Mechanical Polishing (CMP) was adopted to create a
metal gate capped with dielectric material (SiN) for self-aligned contact (SAC) processing in …
metal gate capped with dielectric material (SiN) for self-aligned contact (SAC) processing in …