This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Resistive-switching memory (RRAM) based on transition metal oxides is a potential
candidate for replacing Flash and dynamic random access memory in future generation …

Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

To construct an artificial intelligence system with high efficient information integration and
computing capability like the human brain, it is necessary to realize the biological …

Training and recognition with neural networks generally require high throughput, high
energy efficiency, and scalable circuits to enable artificial intelligence tasks to be operated at …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …