Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures
In this study, the frequency/voltage dependence of the dielectric constant (ε′), dielectric
loss (ε ″), real/imaginary components of the complex electric modulus (M′, M ″), tangent …
loss (ε ″), real/imaginary components of the complex electric modulus (M′, M ″), tangent …
On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage
In this study, C 29 H 32 O 17 was deposited onto p-type Si crystal to obtain Al/(C 29 H 32 O
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
17)/p-Si (MPS) structures. The complex-dielectric-constant (ε′ and ε ″), loss-tangent …
Investigation of electrical characteristics in Al/CdS-PVA/p-Si (MPS) structures using impedance spectroscopy method
The cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and
CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p …
CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p …
Investigating ultra-thin rGO coated ZnO core-shell structures in MOS devices: Electrical/dielectric characteristics and relaxation mechanism
The study focused on the relaxation and polarisation mechanisms of Al/(rGO: ZnO core–
shell)/pSi/Al MOS structures. For this purpose, the rGO: ZnO core–shell structures were …
shell)/pSi/Al MOS structures. For this purpose, the rGO: ZnO core–shell structures were …
Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures
In this study, the effect of frequency and voltage on the dielectric properties of Al/(CdS-
PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface …
PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface …
Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage
Abstract Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO
layer, and some main electrical parameters are investigated, such as surface/interface state …
layer, and some main electrical parameters are investigated, such as surface/interface state …
Investigation on UV photoresponsivity of main electrical properties of Au/CuO-PVA/n-Si MPS type Schottky barrier diodes (SBDs)
GE Demir - Physica B: Condensed Matter, 2021 - Elsevier
In this study,(CuO doped PVA) composite material was deposited using spin coating
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures
We have studied electrical and dielectric parameters of the Al/ZnS-PVA/p-Si structures using
admittance measurements. For this aim, capacitance/conductance–voltage (C/G–V) …
admittance measurements. For this aim, capacitance/conductance–voltage (C/G–V) …
Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz
Pure polyvinyl alcohol (PVA) capped ZnS semiconductor nanocrystals were prepared by
microwave-assisted method, and the optical and structural properties of the as-prepared …
microwave-assisted method, and the optical and structural properties of the as-prepared …
The structural analysis of MWCNT-SiO2 and electrical properties on device application
Abstract Al/MWCNT-SiO 2/p-Si device were obtained using chemical techniques and
characterized using the IV (under dark and light conditions) and CV measurements …
characterized using the IV (under dark and light conditions) and CV measurements …