GaN-based RF transistors offer impressive power densities, although to achieve the
maximum potential offered by GaN, thermal management must be improved beyond the …

This study is for fan-out wafer-level packaging with chip-first (die face-up) formation. Chips
with Cu contact-pads on the front side and a die attach film on the backside are picked and …

High thermal conductivity and an appropriate coefficient of thermal expansion are the key
features of a perfect heat spreader for electronic device packaging, especially for …

Modelocked optically pumped vertical external cavity surface emitting lasers (VECSELs)
have generated up to 6.4-W average power, which is higher than for any other …

This paper reviews critical technologies for spaceborne active antennas. Focus is put on
high-power amplification concepts, solutions for improved thermal management and other …

Today the European GaN interest is slightly shifting away from academic research to
development and industrialization of technology, devices and applications. The recent …

Operating temperature control through a semiconductor device, package, and associated
materials stack is an important determinant of device performance and reliability. A device …

In this work, thermo-mechanical stability of silver diamond composite materials, with thermal
conductivities as high as 830 W/mK, was studied. These novel materials have great potential …

Ku-band GaN power transistor with output power over 100 W under the pulsed operation
mode is presented. A high temperature A1N nucleation together with an Fe doped GaN …

This paper deals with the development of a 120W AlGaN/GaN power bar model starting from
the modeling of the elementary cell of the device. The approach consists in coupling a …