Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …

Over the last decade, beta-phase gallium oxide (β-Ga 2 O 3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …

In this letter we present a high performance-Ga 2 O 3 solar-blind photodetector (SBPD) with
asymmetric Schottky electrodes. The-Ga 2 O 3 films were heteroepitaxially grown on-plane …

Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar do** concentration, Ti/Au …

The Schottky barriers of Ti, Mo, Co, Ni, Pd, and Au on (100) β-Ga 2 O 3 substrates were
analyzed using a combination of current-voltage (JV), capacitance-voltage (CV), and current …

This work presents the temperature-dependent forward conduction and reverse blocking
characteristics of a high-voltage vertical Ga 2 O 3 power rectifier from 300 K to 600 K …