The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …

Defects such as oxygen vacancy are widely considered to be critical for the performance of
ferroelectric HfO 2-based devices, and yet atomistic mechanisms underlying various exotic …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

The chemical trends of limits to do** of many semiconducting metal oxides is analyzed in
terms of the formation energies needed to form the compensating defects. The n-type oxides …

We study catalyst support interactions during chemical vapor deposition of carbon
nanotubes by in situ X-ray photoelectron spectroscopy over a wide range of pressures. We …

Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …

The energies of atomic processes in resistive random access memories (RRAMs) are
calculated for four typical oxides, HfO 2, TiO 2, Ta 2 O 5, and Al 2 O 3, to define a materials …