Identification of an oxygen defect in hexagonal boron nitride

S Li, A Gali - The Journal of Physical Chemistry Letters, 2022 - ACS Publications
Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are
promising building blocks for quantum information processing. Although numerous defect …

NV-centers in SiC: A solution for quantum computing technology?

K Khazen, HJ von Bardeleben - Frontiers in Quantum Science and …, 2023 - frontiersin.org
Spin S= 1 centers in diamond and recently in silicon carbide, have been identified as
interesting solid-state qubits for various quantum technologies. The largely-studied case of …

Dielectric environment sensitivity of carbon centers in hexagonal boron nitride

DI Badrtdinov, C Rodriguez‐Fernandez, M Grzeszczyk… - Small, 2023 - Wiley Online Library
A key advantage of utilizing van‐der‐Waals (vdW) materials as defect‐hosting platforms for
quantum applications is the controllable proximity of the defect to the surface or the substrate …

Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination

KP Korona, J Binder, AK Dąbrowska, J Iwański… - Nanoscale, 2023 - pubs.rsc.org
Defects play a very important role in semiconductors and only the control over the defect
properties allows the implementation of materials in dedicated applications. We present an …

Native antisite defects in h-BN

S Li, P Li, A Gali - Applied Physics Letters, 2025 - pubs.aip.org
Hexagonal boron nitride (hBN) is an excellent host for solid-state single phonon emitters.
Experimental observed emission ranges from infrared to ultraviolet. The emission centers …

Excited-state geometry relaxation of point defects in monolayer hexagonal boron nitride

A Kirchhoff, T Deilmann, M Rohlfing - Physical Review B, 2024 - APS
Point defects in hexagonal boron nitride (hBN) are often discussed as single-photon emitters
for quantum technologies. Understanding the dependence of electronic and optical …

[HTML][HTML] Ab initio methods applied to carbon-containing defects in hexagonal boron nitride

A Wu, DI Badrtdinov, W Lee, M Rösner… - Materials Today …, 2024 - Elsevier
The functionalities activated by defect centers in solids are constantly growing, opening new
avenues for sustainable future technologies. These may extend to quantum optoelectronics …

Fingerprinting Defects in Hexagonal Boron Nitride via Multi‐Phonon Excitation

P Tieben, AW Schell - Advanced Optical Materials, 2024 - Wiley Online Library
Single photon emitters in hexagonal boron nitride (hBN) have gathered a lot of attention due
to their favorable emission properties and the manifold of possible applications. Despite …

[HTML][HTML] Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

J Iwański, J Kierdaszuk, A Ciesielski, J Binder… - Diamond and Related …, 2024 - Elsevier
A common solution for precise magnetic field sensing is to employ spin-active defects in
semiconductors, with the NV center in diamond as a prominent example. However, the three …

Investigation of Spin-Polarized Electronic States of CBVN Defects in h-BN Monolayers

B Sarikavak-Lisesivdin, C Ezen… - Solid State …, 2025 - Elsevier
This study presents an investigation of the electronic properties of the nitrogen-vacancy
adjacent to carbon substitution of boron (CBVN) color center in hexagonal boron nitride (h …