Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: a comprehensive review
GA Sibu, P Gayathri, T Akila, R Marnadu… - Nano Energy, 2024 - Elsevier
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
Characterization of Zn1-xLaxS thin films; compositional, surface, optical, and photoluminescence properties for possible optoelectronic and photocatalytic …
The influences of La3+ substituent levels (x= 0–15 at.%) on the structural, surface, optical,
photoluminescence, and optical constants of the Zn1-xLaxS (ZLS) thin films, synthesized by …
photoluminescence, and optical constants of the Zn1-xLaxS (ZLS) thin films, synthesized by …
Augmented photovoltaic performance of Cu/Ce-(Sn: Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn: Cd) thin films
T Akila, P Gayathri, GA Sibu, V Balasubramani… - Optical Materials, 2024 - Elsevier
In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …
High-performance Ge photodetectors on silicon photonics platform for optical interconnect
T Yan, L Li, Y Zhang, J Hao, J Meng, N Shi - Sensors and Actuators A …, 2024 - Elsevier
With the rapid development of 5 G communications, artificial intelligence, the Internet of
Things and other fields, the increasing demand for data transmission in communication …
Things and other fields, the increasing demand for data transmission in communication …
Standardizing the optimal photo-diode performance of CuO nanostructures through various morphological patterns
MJ Paul, R Suresh, T Akila, V Balasubramani… - Journal of Alloys and …, 2024 - Elsevier
The CuO nanocrystals were prepared using a simple surfactant-assisted co-precipitation
technique then addition of anionic surfactants such as Hexamine (HEX), Polyvinyl …
technique then addition of anionic surfactants such as Hexamine (HEX), Polyvinyl …
Enhancing the optoelectronic properties of V2O5 thin films through Tb do** for photodetector applications
AS Altowyan, J Hakami, H Algarni, M Shkir - Journal of Alloys and …, 2023 - Elsevier
Using highly economical and scalable nebulizer-aided spray pyrolysis approach, a high-
quality terbium (Tb) doped vanadium pentoxide (V 2 O 5) thin film-based optical sensor was …
quality terbium (Tb) doped vanadium pentoxide (V 2 O 5) thin film-based optical sensor was …
Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications
V Balasubramani, PV Pham, A Ibrahim, J Hakami… - Optical Materials, 2022 - Elsevier
In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
Insertion of Ga-MoO3 thin film at Cu/p-Si interface for the fabrication of MIS structure Schottky barrier diodes
P Vivek, J Chandrasekaran, V Balasubramani… - Surfaces and …, 2023 - Elsevier
The fabrication of a metal-insulator-semiconductor diode with a pure MoO 3 and different
weight% of Ga-MoO 3 (5, 10, and 15 wt%) thin film insulator layer grown by JNSP …
weight% of Ga-MoO 3 (5, 10, and 15 wt%) thin film insulator layer grown by JNSP …
Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application
V Balasubramani, J Chandrasekaran… - Journal of Solid State …, 2021 - Elsevier
In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes
V Balasubramani, J Chandrasekaran… - Surfaces and …, 2021 - Elsevier
In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …