Strengthening magnesium by design: Integrating alloying and dynamic processing

SE Prameela, P Yi, Y Hollenweger, B Liu, J Chen… - Mechanics of …, 2022 - Elsevier
Magnesium (Mg) has the lowest density of all structural metals and has excellent potential
for wide use in structural applications. While pure Mg has inferior mechanical properties; the …

[LIBRO][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals

G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potential

CL Allred, X Yuan, MZ Bazant, LW Hobbs - Physical Review B—Condensed …, 2004 - APS
The elastic constants of a wide range of models of defected crystalline and amorphous
silicon are calculated, using the environment-dependent interatomic potential (EDIP). The …

Role of configurational entropy in the thermodynamics of clusters of point defects in crystalline solids

SS Kapur, M Prasad, JC Crocker, T Sinno - Physical Review B—Condensed …, 2005 - APS
The internal configurational entropy of point defect clusters in crystalline silicon is studied in
detail by analyzing their potential energy landscapes. Both on-lattice and off-lattice …

Vacancy-assisted diffusion in silicon: A three-temperature-regime model

D Caliste, P Pochet - Physical review letters, 2006 - APS
In this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in
silicon. We show that the observed temperature dependence for vacancy migration energy …

A bottom–up multiscale view of point-defect aggregation in silicon

T Sinno - Journal of crystal growth, 2007 - Elsevier
A multiscale computational framework is presented for modeling and simulation of point-
defect aggregation in crystalline silicon. Large-scale molecular dynamics simulations based …

Molecular dynamics simulation of the initial stages of He bubbles formation in silicon

L Pizzagalli, ML David, M Bertolus - Modelling and Simulation in …, 2013 - iopscience.iop.org
The initial stages of the formation of bubbles due to helium implantation in silicon remain
largely unknown, for they occur at time and space scales hardly accessible to experiments …

Front-end process modeling in silicon

L Pelaz, LA Marqués, M Aboy, P López… - The European Physical …, 2009 - Springer
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

Computational analysis of binary segregation during colloidal crystallization with DNA-mediated interactions

RT Scarlett, JC Crocker, T Sinno - The Journal of chemical physics, 2010 - pubs.aip.org
A detailed computational study of compositional segregation during growth of colloidal
binary solid-solution crystals is presented. Using a comprehensive set of Metropolis Monte …

Modeling of defects, dopant diffusion and clustering in silicon

M Aboy, I Santos, L Pelaz, LA Marqués… - Journal of Computational …, 2014 - Springer
Ion implantation is a very well established technique to introduce dopants in
semiconductors. This technique has been traditionally used for junction formation in …