The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, develo** semiconductor technology with novel concepts and …

Photodetectors based on two‐dimensional (2D) van der Waals heterostructures (vdWHs)
have demonstrated great potential in modern nanotechnologies across a wide range of …

The seeded growth method offers an efficient way to design core–shell semiconductor
nanocrystals in the liquid phase. The combination of seed and shell materials offers wide …

Abstract Two‐dimensional (2D) material photodetectors have gained great attention as
potential elements for optoelectronic applications. However, the linearity of the …

Due to the outstanding physical properties and the integrated characteristics, such as the
gapless band structure, high state density, high conductivity, dangling‐bond‐free surface …

Metal–semiconductor contacts are crucial components in semiconductor devices. Ultrathin
two‐dimensional transition‐metal dichalcogenide semiconductors can sustain transistor …

Maximizing light‐to‐electricity conversion efficiency is a crucial challenge for the practical
applications of 2D material photodetectors. However, due to the lack of stable and precise …

Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for
semiconductor nanodevices owing to their flexibility, transparency, and appropriate band …

Revealing the light–matter interaction of molybdenum disulfide (MoS2) and further
improving its tunability facilitate the construction of highly integrated optoelectronics in …