Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and
power devices, supporting a future energy-saving society. Here we present evidence of p …

Abstract Monoclinic β-Ga 2 O 3 (bandgap= 4.85 eV) is a transparent semiconducting oxide
with very promising perspectives especially in solar blind UV photodetectors and high power …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

We fabricated high forward and low leakage current trench MOS-type Schottky barrier
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …

We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …