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Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high
electron mobility transistors due to its large dielectric constant and polarization. The …
electron mobility transistors due to its large dielectric constant and polarization. The …
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
We carried out the temperature (22–350 K) and magnetic field (0.05 and 1.4 T) dependent
Hall mobility and carrier density measurements on Al 0.22 Ga 0.78 N/GaN heterostructures …
Hall mobility and carrier density measurements on Al 0.22 Ga 0.78 N/GaN heterostructures …
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
Two-dimensional electron gas (2DEG) property is crucial for the performance of GaN-based
high electron mobility transistors (HEMTs). The 2DEG-related concentration and mobility can …
high electron mobility transistors (HEMTs). The 2DEG-related concentration and mobility can …
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
A novel polarization field engineering based strategy to simultaneously achieve high
electrical conductivity and low thermal conductivity in thermoelectric materials is …
electrical conductivity and low thermal conductivity in thermoelectric materials is …
[HTML][HTML] Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …
revolutionize high-power and high-frequency electronics. To drive this development forward …
Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
Vacancy-type defects in AlInN (10 nm)/AlN (1–2 nm)/GaN were probed by using a positron
annihilation technique. The crystal quality of the AlInN layer and atomic diffusion near …
annihilation technique. The crystal quality of the AlInN layer and atomic diffusion near …
Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to
improve the DC and RF parameters of gallium nitride-based high electron mobility …
improve the DC and RF parameters of gallium nitride-based high electron mobility …
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-
dimensional electron gas (2DEG) heterostructures were investigated and compared with …
dimensional electron gas (2DEG) heterostructures were investigated and compared with …