Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency
This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …
Machine learning approach for predicting electrical features of Schottky structures with graphene and ZnTiO3 nanostructures doped in PVP interfacial layer
In this research, for some different Schottky type structures with and without a
nanocomposite interfacial layer, the current–voltage (I–V) characteristics have been …
nanocomposite interfacial layer, the current–voltage (I–V) characteristics have been …
Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer
A Usha Rani, V Rajagopal Reddy… - Journal of Inorganic and …, 2024 - Springer
This work reviews the impact of cobalt phthalocyanine (CoPc) interlayers on the electrical
and current transport properties of Au/undoped-InP Schottky diodes (SDs). The crystalline …
and current transport properties of Au/undoped-InP Schottky diodes (SDs). The crystalline …
Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers
This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs)
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I …
In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 …
To increase the performance of the metal–semiconductor (MS) structure, MS and pure
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …
polyvinyl-pyrrolidine (PVP), Gr,(ZnTiO3) and (Gr-ZnTiO3)-doped PVP interlayer were formed …
Frequency dependent electrical and dielectric properties of the Au/(RuO2: PVC)/n-Si (MPS) structures
In this study, the electrical and dielectric characteristics of the Au/(RuO 2: PVC)/n-Si
structures were analyzed using the impedance spectroscopy method, including capacitance …
structures were analyzed using the impedance spectroscopy method, including capacitance …
Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures
Abstract In this paper,(Co–TeO 2) nanostructures were synthesized using the microwave-
assisted method for the fabrication of (PVP: Co–TeO 2) as an organic interlayer (OI) at Al/p …
assisted method for the fabrication of (PVP: Co–TeO 2) as an organic interlayer (OI) at Al/p …
Optical and electrical characterization of a ZnO/coronene-based hybrid heterojunction photodiode
Metal oxide hexagonal ZnO thin film with thickness of approximately 509 nm was
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
successfully grown on a glass/ITO substrate by electrochemical deposition. It was observed …
Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer
S Karadeniz, DE Yıldız - Journal of Materials Science: Materials in …, 2023 - Springer
This study investigated the frequency dependent dielectric spectrum of Au/Si structures in
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …