Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals
The variegated family of two-dimensional (2D) crystals has developed rapidly since the
isolation of its forerunner: Graphene. Their planeconfined nature is typically associated with …
isolation of its forerunner: Graphene. Their planeconfined nature is typically associated with …
Metastable group IV allotropes and solid solutions: Nanoparticles and nanowires
In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …
extensive research. Beside tremendous progress in morphological control and integration in …
Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy
Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …
Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer
The integration of both optical and electronic components on a single chip, despite several
challenges, holds the promise of compatibility with complementary metal-oxide …
challenges, holds the promise of compatibility with complementary metal-oxide …
Strain-mediated bandgap engineering of straight and bent semiconductor nanowires
Accurate simulation of semiconductor nanowires (NWs) under strain is challenging,
especially for bent NWs. Here, we propose a simple yet efficient unit-cell model to simulate …
especially for bent NWs. Here, we propose a simple yet efficient unit-cell model to simulate …
Revealing inclined twin related defects in III–V nanowires grown in popular alternative crystallographic directions
Even after two decades of research, conventional⟨ 111⟩ B oriented III–V nanowires are
often perturbed by twins and stacking faults that form perpendicular to their growth direction …
often perturbed by twins and stacking faults that form perpendicular to their growth direction …
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting
nanowires (NWs) is crucial for their potential applications in several fields, such as …
nanowires (NWs) is crucial for their potential applications in several fields, such as …
Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials
The response of semiconductor materials to external magnetic fields is a reliable approach
to probe intrinsic electronic and spin-dependent properties. In this study, we investigate the …
to probe intrinsic electronic and spin-dependent properties. In this study, we investigate the …
Hole and electron effective masses in single InP nanowires with a wurtzite-zincblende homojunction
The formation of wurtzite (WZ) phase in III–V nanowires (NWs) such as GaAs and InP is a
complication hindering the growth of pure-phase NWs, but it can also be exploited to form …
complication hindering the growth of pure-phase NWs, but it can also be exploited to form …
Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires
Abstract InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or
zincblende (ZB) crystal phase and their photoluminescence (PL) properties were …
zincblende (ZB) crystal phase and their photoluminescence (PL) properties were …