Multi-junction (tandem) solar cells (TSCs) consisting of multiple light absorbers with
considerably different band gaps show great potential in breaking the Shockley–Queisser (S …

Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

The III nitrides have been intensely studied in recent years because of their huge potential
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor
alloys are applied in a rapidly expanding range of space and terrestrial programs …

We use density functional theory calculations with the HSE06 hybrid exchange-correlation
functional to investigate InGaN alloys and accurately determine band gaps and band …

We report a new and general strategy for efficient injection of carriers in active nanophotonic
devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire …

; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

Despite the high density of threading dislocations generally found in (AlGaIn) N
heterostructures, the light emission efficiency of such structures is exceptionally high. It has …