Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Oxide materials possess a vast range of functional properties, ranging from
superconductivity to multiferroicity, that stem from the interplay between the lattice, charge …

The ability of spintronic devices to utilize an electric current for manipulating the
magnetization has resulted in large-scale developments, such as magnetic random access …

This review provides a summary of the rich physics expressed within SrTiO 3-based
heterostructures and nanostructures. The intended audience is researchers who are …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

The two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO)
and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin–orbit …

Spintronic devices, such as non-volatile magnetic random access memories and logic
devices, have attracted considerable attention as potential candidates for future high …

The variety of emergent phenomena occurring at oxide interfaces has made these systems
the focus of intense study in recent years. We argue that spin–orbit effects in oxide interfaces …

Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …

A polar conductor, where inversion symmetry is broken, may exhibit directional propagation
of itinerant electrons, ie, the rightward and leftward currents differ from each other, when time …