Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Semiconductor lasers emitting in mid-infrared (IR) range, 2–5μm, have many important
applications in semiconductor industries, military, environmental protection …

A substantial effort has been devoted in recent years to the development of large focal plane
arrays (FPA) of photovoltaic detectors sensitive to infrared (IR) radiation in the 8–12 μm …

The optical and electrical properties of infrared photodiodes diodes based on InAs/(GaIn) Sb
superlattices grown by molecular beam epitaxy were investigated. The diodes, with a cut-off …

Al x In1–x As y Sb1–y digital alloys lattice-matched to GaSb were grown within the miscibility
gap by molecular beam epitaxy, with aluminum fractions ranging from 0% to 80 …

Two different approaches, a photoconductive response technique and a correlation of lasing
thresholds with theoretical threshold carrier concentrations have been used to determine …

The authors have demonstrated the first stimulated emission from Sb-based type-II quantum
cascade configuration. Laser emission at 3.8 µm has been observed for temperatures up to …

We show how cross-sectional scanning tunneling microscopy may be used to reconstruct
the Sb segregation profiles in GaInSb/InAs strained-layer superlattices. These profiles are …

We discuss the state-of-the-art performance of interband cascade lasers emitting in the 3–5
μm spectral band. Broad-area devices with five active stages display pulsed threshold …