We report on transport experiments through high-mobility gate-tunable undoped InSb
quantum wells (QWs). Due to the elimination of any Si modulation do**, the gate-defined …

We investigate an electrostatically defined quantum point contact (QPC) in a high-mobility
InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and …

Shubnikov-de Haas (SdH) oscillations are the fingerprint of the Landau and Zeeman
splitting level structure on the resistivity in presence of a moderate magnetic field before full …

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …

We have characterized the electronic properties of a high-mobility two-dimensional electron
system in modulation doped InAsSb quantum wells and compare them to InSb quantum …

We report on transport characteristics of field effect two-dimensional electron gases (2DEGs)
in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum …

α-Sn, generally known as gray tin, has attracted significant scientific interest due to its
potential to host novel topological phases. Studying the transport properties of α-Sn thin …

Planar semiconductor heterostructures offer versatile device designs and are promising
candidates for scalable quantum computing. Notably, heterostructures based on strained …

Band inversion accompanied by the emergence of gapless and helical edge states at the
boundary is a hallmark of 2D topological insulators. However, a recent experiment reports …

Quantum transport measurements are performed in gate-defined, high-quality, two-
dimensional hole and electron systems in an undoped InSb quantum well. For both …