Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: Surface preparation, passivation and functionalization

S Ciampi, JB Harper, JJ Gooding - Chemical Society Reviews, 2010 - pubs.rsc.org
Organic functionalization of non-oxidized silicon surfaces, while allowing for robust chemical
passivation of the inorganic substrate, is intended and expected to broaden the chemical …

Organic modification of hydrogen terminated silicon surfaces 1

DDM Wayner, RA Wolkow - Journal of the Chemical Society, Perkin …, 2002 - pubs.rsc.org
Over the last decade there has been increasing awareness of the opportunities presented
by the convergence of surface science and organic chemistry for the development of …

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

LT Canham - Applied physics letters, 1990 - pubs.aip.org
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without
the use of epitaxial deposition or lithography. The novel approach uses electrochemical and …

[图书][B] Semiconductor surfaces and interfaces

W Mönch - 2013 - books.google.com
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

[图书][B] Semiconductor electrochemistry

R Memming - 2015 - books.google.com
Providing both an introduction and an up-to-date survey of the entire field, this text captivates
the reader with its clear style and inspiring, yet solid presentation. The significantly …

Ideal hydrogen termination of the Si (111) surface

GS Higashi, YJ Chabal, GW Trucks… - Applied physics …, 1990 - pubs.aip.org
Aqueous HF etching of silicon surfaces results in the removal of the surface oxide and
leaves behind silicon surfaces terminated by atomic hydrogen. The effect of varying the …

Modification of hydrogen‐passivated silicon by a scanning tunneling microscope operating in air

JA Dagata, J Schneir, HH Harary, CJ Evans… - Applied Physics …, 1990 - pubs.aip.org
The chemical modification of hydrogen-passivated n-Si (111) surfaces by a scanning
tunneling microscope (STM) operating in air is reported. The modified surface regions have …

Water adsorption on hydrophilic and hydrophobic surfaces of silicon

L Chen, X He, H Liu, L Qian, SH Kim - The Journal of Physical …, 2018 - ACS Publications
The isotherm thickness and hydrogen-bonding interactions of water layers adsorbed on
hydrophilic and hydrophobic surfaces were quantified and compared. The hydrophilic and …

Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation

GW Trucks, K Raghavachari, GS Higashi, YJ Chabal - Physical review letters, 1990 - APS
Ab initio molecular-orbital theory is used to unravel the mechanism of HF etching leading to
hydrogen-passivated silicon surfaces as observed experimentally. Total-energy calculations …

Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

GS Higashi, RS Becker, YJ Chabal, AJ Becker - Applied physics letters, 1991 - pubs.aip.org
Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-
terminated Si (111) surfaces obtained upon dissolution of the native oxide in HF and NH, F …