High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-
cost and high-functionality photonic integrated circuits. Historically, high temperature …
cost and high-functionality photonic integrated circuits. Historically, high temperature …
Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150° C
Z Lv, S Wang, S Wang, H Chai, L Meng, X Yang… - Optics …, 2023 - opg.optica.org
Direct epitaxial growth of group III-V light sources with excellently thermal performance on
silicon photonics chips promises low-cost, low-power-consumption, high-performance …
silicon photonics chips promises low-cost, low-power-consumption, high-performance …
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
We propose a novel methodology capable of separately evaluating the contribution of the
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon
Realization of fully integrated silicon photonics has been handicapped by the lack of a
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …
Theoretical analysis and modelling of degradation for III–V lasers on Si
InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip
light sources. However, the monolithic integration of III–V materials on Si introduces a high …
light sources. However, the monolithic integration of III–V materials on Si introduces a high …
Kinetically limited misfit dislocations formed during post-growth cooling in III–V lasers on silicon
Misfit dislocations (MDs) classically form at interfaces when an epitaxially strained film
exceeds a critical thickness. We show that metastable MDs also form between layers …
exceeds a critical thickness. We show that metastable MDs also form between layers …
Design and characterisation of multi-mode interference reflector lasers for integrated photonics
InAs quantum dot ridge waveguide lasers comprising single-port multi-mode-interference-
reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised …
reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised …
[HTML][HTML] Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate
This Letter reports on the temperature-dependent optical gain and absorption features,
including the quantum confined Stark effect, of an InAs/InGaAs quantum-dash laser directly …
including the quantum confined Stark effect, of an InAs/InGaAs quantum-dash laser directly …
Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE
We report the characteristics of the strained In_0. 65Ga_0. 35As triple quantum well (QW)
diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched …
diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched …
Introduction and History of Quantum Dot Lasers
K Akahane - Handbook of Radio and Optical Networks …, 2024 - Springer
The concept of quantum dot (QD) lasers and their advantages were predicted in the 1980s,
and considerable efforts have been devoted to develo** high-performance QD lasers. The …
and considerable efforts have been devoted to develo** high-performance QD lasers. The …