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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
[HTML][HTML] Reliability of wide band gap power electronic semiconductor and packaging: A review
Y Wang, Y Ding, Y Yin - Energies, 2022 - mdpi.com
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …
Defect engineering for modulating the trap states in 2D photoconductors
Defect‐induced trap states are essential in determining the performance of semiconductor
photodetectors. The de‐trap time of carriers from a deep trap can be prolonged by several …
photodetectors. The de‐trap time of carriers from a deep trap can be prolonged by several …
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Results presented in this letter demonstrate that the effective channel mobility of lateral,
inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub …
inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub …
Silicon carbide benefits and advantages for power electronics circuits and systems
Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …
from limitations that are inherent to silicon material properties, such as low bandgap energy …
A comprehensive review of recent progress, prospect and challenges of silicon carbide and its applications
Energy efficient electronic design has become imperative due to the depletion of non-
renewable energy resources, worldwide increase in power consumption, and significant …
renewable energy resources, worldwide increase in power consumption, and significant …
Status and prospects for SiC power MOSFETs
SiC electronic device technology has made rapid progress during the past decade. In this
paper, we review the evolution of SiC power MOSFETs between 1992 and the present …
paper, we review the evolution of SiC power MOSFETs between 1992 and the present …
SiC power-switching devices-the second electronics revolution?
Silicon carbide (SiC) offers significant advantages for power-switching devices because the
critical field for avalanche breakdown is about ten times higher than in silicon. SiC power …
critical field for avalanche breakdown is about ten times higher than in silicon. SiC power …
Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements
We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-
semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong …
semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong …
Silicon carbide power MOSFET model and parameter extraction sequence
A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H
silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the …
silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the …