III-nitride semiconductors for intersubband optoelectronics: a review

M Beeler, E Trichas, E Monroy - Semiconductor Science and …, 2013 - iopscience.iop.org
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

Wannier-function software ecosystem for materials simulations

A Marrazzo, S Beck, ER Margine, N Marzari… - Reviews of Modern …, 2024 - APS
Over the past two decades, following the early developments on maximally localized
Wannier functions, an ecosystem of electronic-structure simulation techniques and software …

Kwant: a software package for quantum transport

CW Groth, M Wimmer, AR Akhmerov… - New Journal of …, 2014 - iopscience.iop.org
Kwant is a Python package for numerical quantum transport calculations. It aims to be a user-
friendly, universal, and high-performance toolbox for the simulation of physical systems of …

Analysis of enhanced light emission from highly strained germanium microbridges

MJ Süess, R Geiger, RA Minamisawa, G Schiefler… - Nature …, 2013 - nature.com
Tensile strain is a widely discussed means for inducing a direct bandgap in Ge for the
realization of a semiconductor laser compatible with Si microelectronics. We present a top …

Chemical control of the charge state of nitrogen-vacancy centers in diamond

MV Hauf, B Grotz, B Naydenov, M Dankerl… - Physical Review B …, 2011 - APS
We investigate the effect of surface termination on the charge state of nitrogen-vacancy (NV)
centers, which have been ion-implanted a few nanometers below the surface of diamond …

Fabry-Pérot Interferometry at the Fractional Quantum Hall State

J Nakamura, S Liang, GC Gardner, MJ Manfra - Physical Review X, 2023 - APS
Electronic Fabry-Pérot interferometry is a powerful method to probe quasiparticle charge
and anyonic braiding statistics in the fractional quantum Hall regime. We extend this …

A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

R Chaudhuri, SJ Bader, Z Chen, DA Muller, HG **ng… - Science, 2019 - science.org
A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron
gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We …

High electron mobility in strained GaAs nanowires

L Balaghi, S Shan, I Fotev, F Moebus, R Rana… - Nature …, 2021 - nature.com
Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …

Charge state manipulation of qubits in diamond

B Grotz, MV Hauf, M Dankerl, B Naydenov… - Nature …, 2012 - nature.com
The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state
qubit. However, its charge state is known to be unstable, discharging from the qubit state …

Vacuum Bloch–Siegert shift in Landau polaritons with ultra-high cooperativity

X Li, M Bamba, Q Zhang, S Fallahi, GC Gardner… - Nature …, 2018 - nature.com
A two-level system resonantly interacting with an ac magnetic or electric field constitutes the
physical basis of diverse phenomena and technologies. However, Schrödinger's equation …