ASET and TID characterization of a radiation hardened bandgap voltage reference in a 28-nm bulk CMOS technology
J Chen, Y Chi, B Liang, H Yuan, Y Wen… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a
radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial …
radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial …
Design-technology-co-hardening for voltage reference and linear voltage regulator based on bipolar technology
R Yao, H Lu, Y Zhang, Y Zhang, X Chen, Z Wei… - Microelectronics …, 2023 - Elsevier
This article presents a radiation-hardened voltage reference and a radiation-hardened low-
dropout (LDO) voltage regulator manufactured in bipolar technology for space environment …
dropout (LDO) voltage regulator manufactured in bipolar technology for space environment …
An 8.72 µW low-noise and wide bandwidth FEE design for high-throughput pixel-strip (PS) sensors
The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low
power consumption and higher readout bandwidth to match the low power requirement of its …
power consumption and higher readout bandwidth to match the low power requirement of its …
Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies
L Bin, W Yi, C Jianjun, C Yaqing… - Chinese Journal of …, 2023 - ieeexplore.ieee.org
Total ionizing dose (TID) radiation response of the custom bandgap voltage reference (BGR)
fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is …
fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is …
Soft Error Tolerant Bandgap Reference Utilizing Single-Event Transient Filtering Technique
J Liu, D Wang, B Liang, Y Chi, D Luo… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Bandgap is a critical block for numerous electronic systems, which provides stable voltage
reference for multiple submodules over process, voltage supply, and temperature (PVT) …
reference for multiple submodules over process, voltage supply, and temperature (PVT) …
A Complementary Survey of Radiation-Induced Soft Error Research: Facilities, Particles, Devices and Trends
Soft errors caused by external radiation sources have historically affected the reliability of
electronic devices. The radiation effects community has dedicated significant effort to …
electronic devices. The radiation effects community has dedicated significant effort to …
A single-event transient mitigation technique for bandgap reference utilizing in space application
Q Zhao, J Liu, BI Liang, J Chen, Y Chi, D Luo… - Authorea …, 2023 - techrxiv.org
This paper proposes a radiation-hardened-by-design (RHBD) technique targeting single-
event transient (SET) mitigation in bandgap reference (BGR) circuits. The dual modular …
event transient (SET) mitigation in bandgap reference (BGR) circuits. The dual modular …
TID Radiation Impacts on Charge-trap** Macaroni 3D NAND Flash Memory
Q Qin, F Wang, X Zhan, Y Li… - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
The total ionizing dose (TID) impacts are studied in charge-trap** (CT) type 3D NAND
flash memories with a MONOS (metal-oxide-nitride-oxide-silicon) cell structure and …
flash memories with a MONOS (metal-oxide-nitride-oxide-silicon) cell structure and …
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will
be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm …
be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm …