Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

A Pal, S Zhang, T Chavan, K Agashiwala… - Advanced …, 2023 - Wiley Online Library
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

Bi2O2Se: A rising star for semiconductor devices

X Ding, M Li, P Chen, Y Zhao, M Zhao, H Leng, Y Wang… - Matter, 2022 - cell.com
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …

Charge transport mechanisms in inkjet-printed thin-film transistors based on two-dimensional materials

E Piatti, A Arbab, F Galanti, T Carey, L Anzi… - Nature …, 2021 - nature.com
Printed electronics using inks based on graphene and other two-dimensional materials can
be used to create large-scale, flexible and wearable devices. However, the complexity of ink …

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures

CK Safeer, J Ingla-Aynés, F Herling, JH Garcia… - Nano …, 2019 - ACS Publications
Graphene is an excellent material for long-distance spin transport but allows little spin
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …

Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi2N4 Family

S Sheoran, S Monga, A Phutela… - The Journal of Physical …, 2023 - ACS Publications
Using first-principles calculations, we report the electronic properties with a special focus on
the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry …

Critical assessment of G0W0 calculations for 2D materials: the example of monolayer MoS2

R Rodrigues Pela, C Vona, S Lubeck, B Alex… - npj Computational …, 2024 - nature.com
Abstract Two-dimensional (2D) materials combine many fascinating properties that make
them more interesting than their three-dimensional counterparts for a variety of applications …

Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2

Z Wang, A Molina-Sanchez, P Altmann, D Sangalli… - Nano Letters, 2018 - ACS Publications
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …

Tuning spin–orbit coupling in 2D materials for spintronics: a topical review

K Premasiri, XPA Gao - Journal of Physics: Condensed Matter, 2019 - iopscience.iop.org
Atomically-thin 2D materials have opened up new opportunities in the past decade in
realizing novel electronic device concepts, owing to their unusual electronic properties. The …

Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures

JH Garcia, AW Cummings, S Roche - Nano letters, 2017 - ACS Publications
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization
(WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed …

Spin proximity effects in graphene/topological insulator heterostructures

K Song, D Soriano, AW Cummings, R Robles… - Nano …, 2018 - ACS Publications
Enhancing the spin–orbit interaction in graphene, via proximity effects with topological
insulators, could create a novel 2D system that combines nontrivial spin textures with high …