Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
Bi2O2Se: A rising star for semiconductor devices
With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …
Charge transport mechanisms in inkjet-printed thin-film transistors based on two-dimensional materials
Printed electronics using inks based on graphene and other two-dimensional materials can
be used to create large-scale, flexible and wearable devices. However, the complexity of ink …
be used to create large-scale, flexible and wearable devices. However, the complexity of ink …
Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures
Graphene is an excellent material for long-distance spin transport but allows little spin
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …
Coupled Spin-Valley, Rashba Effect, and Hidden Spin Polarization in WSi2N4 Family
Using first-principles calculations, we report the electronic properties with a special focus on
the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry …
the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry …
Critical assessment of G0W0 calculations for 2D materials: the example of monolayer MoS2
Abstract Two-dimensional (2D) materials combine many fascinating properties that make
them more interesting than their three-dimensional counterparts for a variety of applications …
them more interesting than their three-dimensional counterparts for a variety of applications …
Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …
bands are spin-split because of the strong spin–orbit interaction. In tungsten-based TMDs …
Tuning spin–orbit coupling in 2D materials for spintronics: a topical review
Atomically-thin 2D materials have opened up new opportunities in the past decade in
realizing novel electronic device concepts, owing to their unusual electronic properties. The …
realizing novel electronic device concepts, owing to their unusual electronic properties. The …
Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization
(WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed …
(WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed …
Spin proximity effects in graphene/topological insulator heterostructures
Enhancing the spin–orbit interaction in graphene, via proximity effects with topological
insulators, could create a novel 2D system that combines nontrivial spin textures with high …
insulators, could create a novel 2D system that combines nontrivial spin textures with high …