Optimizing u-shape FinFETs for sub-5nm technology: performance analysis and device-to-circuit evaluation in digital and analog/radio frequency applications
FinFET is considered as the potential contender in the era of Multigate FETs. This
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
Circuit level analysis of a dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET at nanoscale regime
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
Temperature analysis of DMGC CGAA FET for future deep space and military applications: an insight into Analog/RF/Self-Heating/Linearity
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
This manuscript introduces a pioneering investigation on the temperature effects of Dual
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Design optimization of junctionless bottom spacer tapered FinFET: Device to circuit level implementation
S Bhukya, BR Nistala - Microelectronics Journal, 2023 - Elsevier
This manuscript for the first time integrates the traditional FinFET architecture involving
Bottom spacer (BS), Tapering, and Junctionless (JL) concepts to investigate the device …
Bottom spacer (BS), Tapering, and Junctionless (JL) concepts to investigate the device …
A Proposal for Optimization of Spacer Engineering at Sub-5-nm Technology Node for JL-TreeFET: A Device to Circuit Level Implementation
R Andavarapu, S Bagati, S Valasa… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This article for the first time explores the effect of different spacer materials on junctionless
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
(JL) TreeFET for the IRDS sub-5-nm technology node. The study focuses on evaluating the …
An analytical drain current modelling of DMGC CGAA FET: a circuit level implementation
PK Mudidhe, BR Nistala - Physica Scripta, 2023 - iopscience.iop.org
The GAA FET has emerged as a promising device due to its excellent control over short-
channel effects and improved electrostatic control. This manuscript presents the analytical …
channel effects and improved electrostatic control. This manuscript presents the analytical …
Optimizing device dimensions for dual material junctionless tree-FET: a path to improved analog/RF performance
D Beebireddy, K Fatima - ECS Journal of Solid State Science …, 2024 - iopscience.iop.org
This comprehensive study delves into the intricate analysis of the electrical and analog/RF
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization …
Performance investigation of FinFET structures: unleashing multi-gate control through design and simulation at the 7 nm technology node for next-generation …
In this manuscript, we outline a original study that represents the first investigation of its kind,
focusing on DC and analog/RF performance of structural flavors of FinFET. A total of six …
focusing on DC and analog/RF performance of structural flavors of FinFET. A total of six …
Performance analysis of geometric variations in circular double gate MOSFETs at sub-7nm technology nodes
Abstract Circular Double Gate Transistors (CDGTs) is one of the alternative layout-based
solutions to mitigate the short-channel effects with superior electrostatic controllability. In this …
solutions to mitigate the short-channel effects with superior electrostatic controllability. In this …
Enhancing DM Junctionless Tree-FET Performance Through Spacer Optimization: A Comprehensive DC and RF Analysis
This paper explores the impact of spacer materials on the performance of a dual-material
(DM) junctionless (JL) Tree-FET device, analyzing its direct current (DC) and analog/radio …
(DM) junctionless (JL) Tree-FET device, analyzing its direct current (DC) and analog/radio …