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Exciton dynamics in semiconductor nanocrystals
This review article provides an overview of recent advances in the study and understanding
of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs) …
of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs) …
Femtosecond -to- Electron Relaxation in Strongly Confined Semiconductor Nanocrystals
VI Klimov, DW McBranch - Physical Review Letters, 1998 - APS
High-sensitivity femtosecond transient absorption is applied to directly measure the
population-depopulation dynamics of the lowest (1 S) and the first excited (1 P) electron …
population-depopulation dynamics of the lowest (1 S) and the first excited (1 P) electron …
Intraband relaxation in CdSe quantum dots
The relaxation of the 1 P to 1 S electronic states of CdSe semiconductor nanocrystals is
followed by infrared pump-probe spectroscopy. Fast (1 ps) and slow (> 200 ps) components …
followed by infrared pump-probe spectroscopy. Fast (1 ps) and slow (> 200 ps) components …
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
Excited states and energy relaxation processes are studied for stacked InAs/GaAs QD's with
GaAs cap layers grown by migration enhanced epitaxy. Photoluminescence excitation (PLE) …
GaAs cap layers grown by migration enhanced epitaxy. Photoluminescence excitation (PLE) …
Effect of phonon bottleneck on quantum-dot laser performance
M Sugawara, K Mukai, H Shoji - Applied physics letters, 1997 - pubs.aip.org
The effect of phonon bottleneck on quantum-dot laser performance is examined by solving
the carrier-photon rate equations including the carrier relaxation process into the quantum …
the carrier-photon rate equations including the carrier relaxation process into the quantum …
Carrier-carrier correlations in an optically excited single semiconductor quantum dot
We applied low-temperature diffraction-limited confocal optical microscopy to spatially
resolve and spectroscopically study photoluminescence from single self-assembled …
resolve and spectroscopically study photoluminescence from single self-assembled …
Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructures
A systematic study of exciton dynamics is presented in quantum boxes formed naturally
along the axis of a V-shaped quantum wire, by means of time and spatially resolved …
along the axis of a V-shaped quantum wire, by means of time and spatially resolved …
Quantum size effect in self-organized InAs/GaAs quantum dots
R Heitz, O Stier, I Mukhametzhanov, A Madhukar… - Physical Review B, 2000 - APS
The quantum size effect of exciton transitions is investigated experimentally and theoretically
for self-organized InAs/GaAs quantum dots (QD's). Photoluminescence excitation (PLE) …
for self-organized InAs/GaAs quantum dots (QD's). Photoluminescence excitation (PLE) …
Hot charge carriers in quantum dots: generation, relaxation, extraction, and applications
This article discusses the hot charge carriers in semiconductor quantum dots (QDs): their
generation, relaxation, extraction and applications in different technologically relevant areas …
generation, relaxation, extraction and applications in different technologically relevant areas …
Optical and structural properties of InP quantum dots embedded in
Within this work we present optical and structural properties of InP quantum dots embedded
in (Al x Ga 1− x) 0.51 In 0.49 P barriers. Atomic force microscopy measurements show a …
in (Al x Ga 1− x) 0.51 In 0.49 P barriers. Atomic force microscopy measurements show a …