Status and outlook of metal–inorganic semiconductor–metal photodetectors
Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …
attention in many areas, such as optical fiber communication, sensing, missile guidance …
Nanostructured MoS2 and WS2 Photoresponses under Gas Stimuli
This study was on the optoelectronic properties of multilayered two-dimensional MoS2 and
WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and …
WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and …
[HTML][HTML] Improved UV photoresponse performance of ZnO nanowire array photodetector via effective Pt nanoparticle coupling
N Wang, J Li, C Wang, X Zhang, S Ding, Z Guo, Y Duan… - Nanomaterials, 2024 - mdpi.com
Ultraviolet (UV) photodetectors (PDs) based on nanowire (NW) hold significant promise for
applications in fire detection, optical communication, and environmental monitoring. As …
applications in fire detection, optical communication, and environmental monitoring. As …
Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications
The distinctive properties of strongly correlated oxides provide a variety of possibilities for
modulating the properties of 2D transition metal dichalcogenides semiconductors; which …
modulating the properties of 2D transition metal dichalcogenides semiconductors; which …
Effect of metal contacts on a GaN/sapphire-based MSM ultraviolet photodetector
We report the fabrication of a GaN/sapphire ultraviolet (UV) photodetector (PD) with
asymmetric (Pt-Ag) and symmetric (Pt-Pt) metal–semiconductor–metal (MSM) structure. The …
asymmetric (Pt-Ag) and symmetric (Pt-Pt) metal–semiconductor–metal (MSM) structure. The …
Improving performance of the MgZnO ultraviolet photodetectors by changing the interdigital electrode width
XJ Yang, DY Jiang, ZX Guo, W Zhang, N Hu… - Materials Research …, 2018 - Elsevier
Abstract We grow the Mg 0.24 Zn 0.76 O thin film onto a quartz substrate by the radio
frequency magnetron sputtering technique. Planar geometry metal-semiconductor-metal …
frequency magnetron sputtering technique. Planar geometry metal-semiconductor-metal …
Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature
Y Liu, T Zhang, L Shen, H Wu, N Wang… - … Applied Materials & …, 2023 - ACS Publications
For traditional wide-bandgap semiconductor materials, a high-temperature process is
unavoidable for improving crystallization quality, so the substrate of the device is greatly …
unavoidable for improving crystallization quality, so the substrate of the device is greatly …
The Impacts of Different Electrode Structures on the Device Performance of $\beta $-(Al $ _ {\textit {x}} $ Ga $ _ {\text {1$-$\textit {x}}}\text {)} _ {\text {2}} $ O $ _ {\text {3} …
Y Liu, P Wang, W Fan, T Yang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The effects of different electrode structures on the device performance of–(AlxGa1− x)
2O3/Ga2O3 heterostructure metal-semiconductor–metal photodetectors (MSM PDs) have …
2O3/Ga2O3 heterostructure metal-semiconductor–metal photodetectors (MSM PDs) have …
Differential receivers with highly-uniform MSM Germanium photodetectors capped by SiGe layer
Waveguide integrated MSM (metal-semiconductor-metal) Germanium (Ge) photodetectors
(PDs) with a SiGe cap** layer were exploited for silicon photonics integration. Under …
(PDs) with a SiGe cap** layer were exploited for silicon photonics integration. Under …
Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures
The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-
semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a …
semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a …