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[PDF][PDF] Analysis of small-signal parameters of 2-D MODFET with polarization effects for microwave applications
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field
effect transistor (MODFET) has been developed. The model is based on the solution of 2-D …
effect transistor (MODFET) has been developed. The model is based on the solution of 2-D …
S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT
This paper discusses the design of a wideband low noise amplifier (LNA) in which specific
architecture decisions were made in consideration of system-on-chip implementation for …
architecture decisions were made in consideration of system-on-chip implementation for …
Small-signal modeling of pHEMTs and analysis of their microwave performance
Z HEMAIZIA, N Sengouga, M Missous - 2010 - archives.univ-biskra.dz
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high
electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits …
electron mobility transistors (pHEMT) is crucial for the design of microwave analog circuits …
An Analytical Two-Dimensional CV Model of AlGaN/GaN MODFET for High Speed Circuit Applications.
In the present paper, a two-dimensional analytical model is developed for the Capacitance-
Voltage (CV) characteristics of a pseudomorphic AlGaN/GaN HEMTfor high speed circuit …
Voltage (CV) characteristics of a pseudomorphic AlGaN/GaN HEMTfor high speed circuit …
A Two-Dimensional Analytical Modeling of AlGaN/GaN MODFET for Microwave Applications
A two-dimensional analytical charge control model for the microwave characteristics of
AlGaN/GaN psuedomorphic High Electron Mobility Transistors (pHEMT) is developed. The …
AlGaN/GaN psuedomorphic High Electron Mobility Transistors (pHEMT) is developed. The …