Epitaxial oxides on semiconductors: from fundamentals to new devices

DP Kumah, JH Ngai, L Kornblum - Advanced Functional …, 2020 - Wiley Online Library
Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …

New modalities of strain-control of ferroelectric thin films

AR Damodaran, JC Agar, S Pandya… - Journal of Physics …, 2016 - iopscience.iop.org
Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling
between their electrical, mechanical, thermal, and optical responses, provide functionalities …

[HTML][HTML] Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - Elsevier
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

L Mazet, SM Yang, SV Kalinin… - … and technology of …, 2015 - iopscience.iop.org
SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the
route to the monolithic integration of various complex oxides on the complementary metal …

[HTML][HTML] Fabrication and photonic applications of Si-integrated LiNbO3 and BaTiO3 ferroelectric thin films

Y Wen, H Chen, Z Wu, W Li, Y Zhang - APL Materials, 2024 - pubs.aip.org
Silicon, renowned for its applications in electronic circuits, also offers significant advantages
in the realm of integrated optics. While silicon does have inherent limitations in fabricating …

[HTML][HTML] Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

MD McDaniel, TQ Ngo, S Hu, A Posadas… - Applied Physics …, 2015 - pubs.aip.org
Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …

Carrier density modulation in a germanium heterostructure by ferroelectric switching

P Ponath, K Fredrickson, AB Posadas, Y Ren… - Nature …, 2015 - nature.com
The development of non-volatile logic through direct coupling of spontaneous ferroelectric
polarization with semiconductor charge carriers is nontrivial, with many issues, including …

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3

J Kim, D Song, H Yun, J Lee, JH Kim… - Advanced Electronic …, 2023 - Wiley Online Library
Reducing the leakage current through the gate oxide is becoming increasingly important for
power consumption reduction as well as reliability in integrated circuits as the …

[HTML][HTML] Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

MD McDaniel, C Hu, S Lu, TQ Ngo, A Posadas… - Journal of applied …, 2015 - pubs.aip.org
The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …

[HTML][HTML] High-k perovskite gate oxide BaHfO3

YM Kim, C Park, T Ha, U Kim, N Kim, J Shin, Y Kim… - APL Materials, 2017 - pubs.aip.org
We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray
diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and …