Total ionizing dose effects in MOS oxides and devices Page 1 IEEE TRANSACTIONS ON
NUCLEAR SCIENCE, VOL. 50, NO. 3, JUNE 2003 483 Total Ionizing Dose Effects in MOS …

Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar linear transistors was first identified
in bipolar microcircuit transistors in 1991 and demonstrated in bipolar linear circuits in 1994 …

Electronic devices in space environments can contain numerous types of oxides and
insulators. Ionizing radiation can induce significant charge buildup in these oxides and …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …

In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

The behavior of transistors in commercial-grade complementary metal-oxide semiconductor
technologies in the 65 and 130 nm nodes has been explored up to a total ionizing dose of 1 …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

We have performed capacitance-voltage (CV) and thermally-stimulated-current (TSC)
measurements on non-radiation-hard MOS capacitors simulating screen oxides of modern …