Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices
M Zendrini, V Dubrovskii, A Rudra… - ACS Applied Nano …, 2024 - ACS Publications
The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …
Trap** layers prevent dopant segregation and enable remote do** of templated self-assembled InGaAs Nanowires
Selective area epitaxy is a promising approach to define nanowire networks for topological
quantum computing. However, it is challenging to concurrently engineer nanowire …
quantum computing. However, it is challenging to concurrently engineer nanowire …
Simultaneous selective area growth of wurtzite and zincblende self-catalyzed GaAs nanowires on silicon
Selective area epitaxy constitutes a mainstream method to obtain reproducible
nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate …
nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate …
Selective area epitaxy of GaAs: The unintuitive role of feature size and pitch
Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor
nanostructures in a device-compatible configuration. In the current paradigm, SAE is …
nanostructures in a device-compatible configuration. In the current paradigm, SAE is …
Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing,
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
Modeling the Ga/As binary system across temperatures and compositions from first principles
Materials composed of elements from the third and fifth columns of the periodic table display
a very rich behavior, with the phase diagram usually containing a metallic liquid phase and …
a very rich behavior, with the phase diagram usually containing a metallic liquid phase and …
From layer-by-layer growth to nanoridge formation: selective area epitaxy of GaAs by MOVPE
Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in
regular arrays with predefined geometry. Here, we investigate the growth mechanisms of …
regular arrays with predefined geometry. Here, we investigate the growth mechanisms of …
Control of Ge island coalescence for the formation of nanowires on silicon
Germanium nanowires could be the building blocks of hole-spin qubit quantum computers.
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …
Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while …
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Selective area growth (SAG) of nanowires and networks promise a route toward scalable
electronics, photonics, and quantum devices based on III-V semiconductor materials. The …
electronics, photonics, and quantum devices based on III-V semiconductor materials. The …