[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Ion implantation of advanced silicon devices: Past, present and future
MI Current - Materials Science in Semiconductor Processing, 2017 - Elsevier
Ion implantation has been a key enabler, along with improvements in lithography, for the
40+ year evolution of MOS and then CMOS devices. Alterations in the channel do** levels …
40+ year evolution of MOS and then CMOS devices. Alterations in the channel do** levels …
Review of FINFET technology
M Jurczak, N Collaert, A Veloso… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
In view of the difficulties in planar CMOS transistor scaling to preserve an acceptable gate to
channel control FINFET based multi-gate (MuGFET) devices have been proposed as a …
channel control FINFET based multi-gate (MuGFET) devices have been proposed as a …
[KSIĄŻKA][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit
The relentless scaling of semiconductor devices pushes the do** level far above the
equilibrium solubility, yet the doped material must be sufficiently stable for subsequent …
equilibrium solubility, yet the doped material must be sufficiently stable for subsequent …
Advances on do** strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance
A Veloso, A De Keersgieter, P Matagne… - Materials Science in …, 2017 - Elsevier
This paper reviews some of the key do** strategies pursued for scaled finFET devices
fabrication, addressing several of the critical integration challenges faced by this device …
fabrication, addressing several of the critical integration challenges faced by this device …
Atom-probe for FinFET dopant characterization
With the continuous shrinking of transistors and advent of new transistor architectures to
keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D …
keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D …
Three-dimensional do** and diffusion in nano scaled devices as studied by atom probe tomography
Nowadays, technological developments towards advanced nano scale devices such as
FinFETs and TFETs require a fundamental understanding of three-dimensional do** …
FinFETs and TFETs require a fundamental understanding of three-dimensional do** …
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
With emerging three-dimensional device architectures for advanced silicon devices such as
fin field-effect-transistors (FinFETs), new metrology challenges are faced to characterize …
fin field-effect-transistors (FinFETs), new metrology challenges are faced to characterize …
Conformal and ultra shallow junction formation achieved using a pulsed-laser annealing process integrated with a modified plasma assisted do** method
Recently, a shallow and conformal do** profile is required for promising 3D structured
devices. In this study, we deposited the dopant phosphorus (P) using modified plasma …
devices. In this study, we deposited the dopant phosphorus (P) using modified plasma …