A review of DC/DC converter-based electrochemical impedance spectroscopy for fuel cell electric vehicles
Considering transport applications, there is worldwide an increasing interest in the use of
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
A review of galvanically isolated impedance-source DC–DC converters
Impedance-source converters, an emerging technology in electric energy conversion,
overcome limitations of conventional solutions by the use of specific impedance-source …
overcome limitations of conventional solutions by the use of specific impedance-source …
Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives
High-electron-mobility transistors based on gallium nitride technology are the most recently
developed power electronics devices involved in power electronics applications. This article …
developed power electronics devices involved in power electronics applications. This article …
Instability analysis and oscillation suppression of enhancement-mode GaN devices in half-bridge circuits
This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN)
transistors based half-bridge circuits. The instability may cause sustained oscillation …
transistors based half-bridge circuits. The instability may cause sustained oscillation …
Current-source inverter integrated motor drives using dual-gate four-quadrant wide-bandgap power switches
Four-quadrant (FQ) switches that have both bidirectional current and reverse-voltage
blocking (RVB) capabilities are appealing candidates for use in current-source inverters …
blocking (RVB) capabilities are appealing candidates for use in current-source inverters …
Dead time optimization in a GaN-based buck converter
M Asad, AK Singha, RMS Rao - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
A gallium nitride (GaN) field effect transistor can provide superior performance over a Si-
mosfet due to its low on-state resistance and low junction capacitances. However, a GaN …
mosfet due to its low on-state resistance and low junction capacitances. However, a GaN …
An accurate datasheet-based full-characteristics analytical model of GaN HEMTs for deadtime optimization
The gallium nitride high electron mobility transistors (GaN HEMTs) are a superior candidate
for the new-generation power electronics systems with higher efficiency and power density …
for the new-generation power electronics systems with higher efficiency and power density …
Comparative investigation of PWM current-source inverters for future machine drives using high-frequency wide-bandgap power switches
Pulse-width-modulated (PWM) current-source inverters (CSIs) in machine drives have
received limited research attention since the 1980s because they are generally considered …
received limited research attention since the 1980s because they are generally considered …
A case study on common mode electromagnetic interference characteristics of GaN HEMT and Si MOSFET power converters for EV/HEVs
Wide bandgap semiconductors, such as gallium nitride (GaN)-based power devices have
become increasingly popular in the automotive industry due to their low on-state resistance …
become increasingly popular in the automotive industry due to their low on-state resistance …
Operation and analysis of current-source inverters using dual-gate four-quadrant wide-bandgap power switches
Monolithic four-quadrant (FQ) switches that have both bidirectional current and reverse-
voltage blocking (RVB) capabilities are appealing candidates for use in current-source …
voltage blocking (RVB) capabilities are appealing candidates for use in current-source …