Study of effect of downscaling on the analog/RF performance of gate all around JLMOSFET

The influences of radiation effects on DC/RF performances of L g= 22 nm gate-all-around nanosheet field-effect transistor

Y Ma, J Bi, S Majumdar, S Mehmood, L Ji… - Semiconductor …, 2022 - iopscience.iop.org
In this paper, we carried out detailed technology computer aided design simulations to
investigate the radiation effects, eg total ionizing dose (TID) and single-event effects (SEEs) …
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Effect of lattice heating on the switching performance of a silicon‐gate all around dielectric window spaced‐multi‐channel MOSFET

UAS Yajula, GP Mishra… - International Journal of …, 2024 - Wiley Online Library
In this article, analysis of heating effect for a range of thermal resistance (R th) and different
ambient temperatures on the DC parameters of the proposed Silicon‐Gate All Around …
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Modeling of Fractional Order PID Controller and Study the Application of Couple Spherical Tank Level Control

MS Ansari, S Bhoi, R Pradhan - 2023 1st International …, 2023 - ieeexplore.ieee.org
In this topic a fractional order proportional Integral Derivative Controller is proposed to
control the flow of liquid in a couple tank system which is very useful in petrochemical, water …
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Simulation and performance study of silicon nanowire (Si-NW) field-effect transistor (FET) pH microsensor

N Ayadi, B Hajji, H Madani, A Lale, J Launay… - Proceedings of the 2nd …, 2021 - Springer
In modern industry which is characterized by very small scales and sizes, the Silicon
nanowire Ion-Sensitive Field-Effect Transistors Sensors (Si-nw-ISFET) are considered as a …
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