Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
S Nakamura - Science, 1998 - science.org
REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet
light have been obtained through the use of an InGaN active layer instead of a GaN active …
light have been obtained through the use of an InGaN active layer instead of a GaN active …
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell… - Nature materials, 2006 - nature.com
Group-III-nitride semiconductors have shown enormous potential as light sources for full-
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
III‐Nitride micro‐LEDs for efficient emissive displays
Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …
efficiency, and large color gamut, are of great interest for applications such as watches …
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B Heying, R Averbeck, LF Chen, E Haus… - Journal of Applied …, 2000 - pubs.aip.org
The characteristic surface morphologies of GaN grown by plasma-assisted molecular beam
epitaxy under various growth conditions have been investigated. Three growth regimes one …
epitaxy under various growth conditions have been investigated. Three growth regimes one …
Dislocation mediated surface morphology of GaN
B Heying, EJ Tarsa, CR Elsass, P Fini… - Journal of Applied …, 1999 - pubs.aip.org
The surfaces of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and
molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM). Due to …
molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM). Due to …
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …
a viable approach to reducing or eliminating the issues associated with polarization-related …
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
High internal and external quantum efficiency InGaN/GaN solar cells
High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The
internal quantum efficiency was assessed through the combination of absorption and …
internal quantum efficiency was assessed through the combination of absorption and …
Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A Even, G Laval, O Ledoux, P Ferret, D Sotta… - Applied Physics …, 2017 - pubs.aip.org
The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …