Progress in bulk GaN growth
K Xu, JF Wang, GQ Ren - Chinese Physics B, 2015 - iopscience.iop.org
Three main technologies for bulk GaN growth, ie, hydride vapor phase epitaxy (HVPE), Na-
flux method, and ammonothermal method, are discussed. We report our recent work in …
flux method, and ammonothermal method, are discussed. We report our recent work in …
Wide gap semiconductor microwave devices
VV Buniatyan, VM Aroutiounian - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
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Dislocation effect on light emission efficiency in gallium nitride
We modify the model of nonradiative carrier recombination on threading dislocation cores
[ZZ Bandić, PM Bridger, EC Piquette, and TC McGill, Solid-State Electron. 44, 221 (2000)] to …
[ZZ Bandić, PM Bridger, EC Piquette, and TC McGill, Solid-State Electron. 44, 221 (2000)] to …
Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon
High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been
demonstrated as a promising solution to realize Si-based laser sources with very low …
demonstrated as a promising solution to realize Si-based laser sources with very low …
[HTML][HTML] Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-
Ga 2 O 3 vertical Schottky rectifiers was observed for fluences up to 1.43× 10 16 cm− 2. The …
Ga 2 O 3 vertical Schottky rectifiers was observed for fluences up to 1.43× 10 16 cm− 2. The …
What is the real value of diffusion length in GaN?
EB Yakimov - Journal of Alloys and Compounds, 2015 - Elsevier
The applicability of scanning electron microscopy methods for excess carrier diffusion length
measurements in GaN is discussed. The discussion is based on author's experiments and …
measurements in GaN is discussed. The discussion is based on author's experiments and …
Theoretical analysis and modelling of degradation for III–V lasers on Si
InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip
light sources. However, the monolithic integration of III–V materials on Si introduces a high …
light sources. However, the monolithic integration of III–V materials on Si introduces a high …
[HTML][HTML] 10 MeV proton damage in β-Ga2O3 Schottky rectifiers
The electrical performance of vertical geometry Ga 2 O 3 rectifiers was measured before and
after 10 MeV proton irradiation at a fixed fluence of 10 14 cm− 2, as well as subsequent …
after 10 MeV proton irradiation at a fixed fluence of 10 14 cm− 2, as well as subsequent …
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
Schottky rectifiers with implanted p/sup+/guard ring edge termination fabricated on free-
standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry …
standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry …
Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in (,) and (,) Single Quantum Wells
For nitride-based (In, Ga) N and (Al, Ga) N quantum-well (QW) light-emitting diodes (LEDs),
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …
the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier …