(57) ABSTRACT Architecture, design, structure, layout, and method of form ing a
Programmable Resistive Device (PRD) memory in standard cell library are disclosed. The …

(57) ABSTRACT A time-based sensing circuit to convert resistance of a programmable
resistive element into logic states is dis closed. A programmable resistive memory has a …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

G11C17/14—Read-only memories programmable only once; Semi-permanent stores, eg
manually-replaceable information cards in which contents are determined by selectively …

US11018687B1 - Power-efficient compute-in-memory analog-to-digital converters - Google
Patents US11018687B1 - Power-efficient compute-in-memory analog-to-digital converters …

G11C17/14—Read-only memories programmable only once; Semi-permanent stores, eg
manually-replaceable information cards in which contents are determined by selectively …

(57) ABSTRACT An One-Time Programmable (OTP) memory is built in at least one of nano-
wire structures. The OTP memory has a plurality of OTP cells. At least one of the OTP cells …

An OTP with ultra-low power read can be programmed with a minimum and a maximum
program voltage. When programming within the range, the post-program OTP to preprogram …

(57) ABSTRACT A time-based sensing circuit to convert resistance of a one-time
programmable (OTP) element into logic states is disclosed. A one-time programmable (OTP) …

The disclosed MTJ read circuits include a current steering element coupled to the read path.
At a first node of the current steering element, a proportionally larger current is maintained to …