Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …

The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET
including the static characteristics and switching performance are carried out in this paper …

This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …

Due to the superior material properties, SiC mosfet is a promising candidate switching
device for high power density and high efficiency power conversion system. The robustness …

Silicon carbide (SiC) MOSFETs with ratings of 3.3 to 15 kV represent a dramatic
improvement over available silicon devices, enabling the realization of medium-voltage …

This letter proposes a behavioral model for analyzing the ground current in medium-voltage
(MV) inductors. The impedance between the terminals and the ground connection of …

The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short
channel is characterized in this paper. The platform consisting of a phase-leg configuration …

The impact of the body diode and the anti-parallel junction barrier Schottky (JBS) diode on
the switching performance of the 3rd generation 10 kV SiC MOSFET from Wolfspeed/Cree is …

Industrial processes which use induction and dielectric heating are still relying on resonant
converters based on vacuum tubes. New emerging medium‐voltage silicon carbide (SiC) …