Spontaneous ordering of nanostructures on crystal surfaces
VA Shchukin, D Bimberg - Reviews of Modern Physics, 1999 - APS
A review is given of theoretical concepts and experimental results on spontaneous formation
of periodically ordered nanometer-scale structures on crystal surfaces. Thermodynamic …
of periodically ordered nanometer-scale structures on crystal surfaces. Thermodynamic …
Self-organization of nanostructures in semiconductor heteroepitaxy
C Teichert - Physics Reports, 2002 - Elsevier
In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
B Voigtländer - Surface Science Reports, 2001 - Elsevier
Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …
[BOOK][B] Epitaxy of nanostructures
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …
The size of key elements in modern devices approaches the nanometer scale, for both …
Growth and self-organization of SiGe nanostructures
Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …
development of strain induced nanodevices and bandgap engineering, in particular …
Composition of InAs quantum dots on GaAs (001): Direct evidence for (In, Ga) As alloying
Scanning tunneling microscopy has been used to study the growth by molecular beam
epitaxy of InAs quantum dots (QD's) on GaAs (001), with specific emphasis on measuring …
epitaxy of InAs quantum dots (QD's) on GaAs (001), with specific emphasis on measuring …
Instabilities in crystal growth by atomic or molecular beams
When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …
shape is often destroyed by instabilities of various types. In the case of growth from a …
Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QD's)
grown on GaAs (001) substrates by molecular-beam epitaxy has been studied by scanning …
grown on GaAs (001) substrates by molecular-beam epitaxy has been studied by scanning …
Influence of surface stress on the equilibrium shape of strained quantum dots
N Moll, M Scheffler, E Pehlke - Physical Review B, 1998 - APS
The equilibrium shapes of InAs quantum dots (ie, dislocation-free, strained islands with
sizes>~ 10 000 atoms) grown on a GaAs (001) substrate are studied using a hybrid …
sizes>~ 10 000 atoms) grown on a GaAs (001) substrate are studied using a hybrid …
[BOOK][B] Materials and Their Applications
IHCIIVI Semiconductor - 2002 - api.taylorfrancis.com
II-VI Semiconductor Materials and Their Applications Page 1 Page 2 II-VI Semiconductor
Materials and Their Applications Page 3 Optoelectronic Properties of Semiconductors and …
Materials and Their Applications Page 3 Optoelectronic Properties of Semiconductors and …