Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
Oxide semiconductor thin‐film transistors: a review of recent advances
Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …
applications. The key components are wide bandgap semiconductors, where oxides of …
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
We investigated the impact of the passivation layer on the stability of indium-gallium-zinc
oxide (IGZO) thin film transistors. While the device without any passivation layer showed a …
oxide (IGZO) thin film transistors. While the device without any passivation layer showed a …
[PDF][PDF] Role of gallium do** in dramatically lowering amorphous‐oxide processing temperatures for solution‐derived indium zinc oxide thin‐film transistors
Amorphous-oxide semiconductors (AOSs) are promising candidates as transparent
semiconductors for thin-film transistor (TFT) circuitry due to their favorable field-effect …
semiconductors for thin-film transistor (TFT) circuitry due to their favorable field-effect …
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A Suresh, JF Muth - Applied Physics Letters, 2008 - pubs.aip.org
The effects of bias stress on transistor performance are important when considering
nontraditional channel materials for thin film transistors. Applying a gate bias stress to …
nontraditional channel materials for thin film transistors. Applying a gate bias stress to …
42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs
R Hayashi, A Sato, M Ofuji, K Abe… - … Symposium Digest of …, 2008 - Wiley Online Library
We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as
well as circuit operation based on these TFTs. We also report a novel TFT structure which …
well as circuit operation based on these TFTs. We also report a novel TFT structure which …
Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status
The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …
semiconductor devices that ranges from displays technology, to clothing and packaging …
The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
KH Lee, JS Jung, KS Son, JS Park, TS Kim… - Applied Physics …, 2009 - pubs.aip.org
We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide
(GIZO) thin film transistors. The application of light on the negative bias temperature stress …
(GIZO) thin film transistors. The application of light on the negative bias temperature stress …
Instabilities in amorphous oxide semiconductor thin-film transistors
JF Conley - IEEE Transactions on Device and materials …, 2010 - ieeexplore.ieee.org
Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method
C Avis, J Jang - Journal of Materials Chemistry, 2011 - pubs.rsc.org
We have studied the fabrication of solution processed aluminum-oxide (AlOx) gate dielectric
at the maximum process temperature of 300° C for a solution based zinc-tin-oxide (ZTO) thin …
at the maximum process temperature of 300° C for a solution based zinc-tin-oxide (ZTO) thin …